SPB100N03S2-03 G ; Current - Continuous Drain (Id) @ 25°C · 100A (Tc) ; Drive Voltage (Max Rds On, Min Rds On). 10V ; Rds On (Max) @ Id, Vgs. 3mOhm @ 80A, 10V ; Vgs( ...
SPB100N03S2-03 ; Input Capacitance (Ciss) (Max) @ Vds. 7020 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 300W (Tc) ; Operating Temperature. -55°C ~ 175°C ( ...
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The Infineon Technologies MOSFET SPB100N03S2-03G is a medium-popularity electronic component that is balanced in terms of supply and demand. It has a fake ...
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SPB100N03S2-03 G P-TO263-3 MOSFET N-CH 30V 100A D2PAK ; Gate Charge (Qg) @ Vgs, 150nC @ 10V ; Input Capacitance (Ciss) @ Vds, 7020pF @ 25V ; Power - Max, 300W.
SPB100N03S2-03 G, TO263, 30V, 20(±V), 1.7V, 150A. SPB100N03S2-03G. Similar type recommendation. VBL1302. TO263. 30V. 20(±V). 1.7V. 150A. View all products>> ...
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 233A at 25°C, for detailed information see app.
PDF Datasheet Preview. SPB100N03S2-03G OptiMOS TM Power-Transistor • N-Channel • Enhancement mode • Excellent Gate Charge x RDS on product FOM
SPB100N03S2 MOSFET. Datasheet pdf. Equivalent. Type Designator: SPB100N03S2 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power ...