Aug 21, 2012 · PNP Silicon Switching Transistors. • High DC current gain: 0.1 mA to 100 mA. • Low collector-emitter saturation voltage.
SMBT3906, MMBT3906 Datasheet by Infineon Technologies ; Collector-base capacitance Ccb = ƒ(VCB). Emitter-base capacitance Ceb = ƒ(VEB) ; 0 4 8 12 16 V22. CCB/CEB.
High DC current gain: 0.1 mA to 100 mA; Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor ...
SMBT 3906 E6327 Infineon Technologies Bipolar Transistors - BJT AF GP BJT PNP 40V 0.2A datasheet, inventory, & pricing.
Aug 20, 2001 · SMBT3906. s2A. 1 = B. 2 = E. 3 = C. SOT23. Maximum Ratings. Parameter. Symbol. Value. Unit. Collector-emitter voltage. VCEO. 40. V. Collector- ...
Part #: SMBT3906. Download. File Size: 110Kbytes. Page: 7 Pages. Description: PNP Silicon Switching Transistor. Manufacturer: Infineon Technologies AG.
Part #: SMBT3906. Download. File Size: 888Kbytes. Page: 13 Pages. Description: High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation ...
Size:178K siemens smbt3906.pdf · SMBT3906. PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA Low collector-emitter ...
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40V 200mA 250MHz. PNP Transistor. Package/Image: SOT23. There are no reviews for this product. Write a review. Please login or register to review. SMBT3906.