SI4920DY-T1-E3 ; Technology. MOSFET (Metal Oxide) ; Configuration. 2 N-Channel (Dual) ; FET Feature. Logic Level Gate ; Drain to Source Voltage (Vdss). 30V.

FEATURED PRODUCTS. VISHAY ... TrenchFET® Gen V power MOSFET with a very low RDS x Qg figure-of-merit (FOM). ... Ideal for switching applications and boasts a die-on ...

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional ...

SI4920DY-T1-E3 Tech Specifications ; Turn-Off Delay Time, 60 ns ; Continuous Drain Current (ID), 6.9A ; Gate to Source Voltage (Vgs), 20V ; Drain to Source ...

Part #: SI4920DY-T1-E3. Download. File Size: 1MbKbytes. Page: 9 Pages. Description: Dual N-Channel 30 V (D-S) MOSFET. Manufacturer: VBsemi Electronics Co.

SI4214DDY-T1-GE3 ; Typical Turn-Off Delay Time, 15 ns ; Typical Turn-On Delay Time, 7 ns ; Width, 3.9 mm ; Part # Aliases, SI4920DY-T1-E3-S ; RoHS CompliantYes.

Jan 2, 2006 · Ordering Information: Si4920DY–T1. Si4920DY–T1–E3 (Lead (Pb)–free). N-Channel MOSFET. G1. D1. S1. N-Channel MOSFET. G2. D2. S2. ABSOLUTE MAXIMUM ...

SI4214DDY-T1-GE3 Vishay Semiconductors MOSFET 30V Vds 20V Vgs SO-8 datasheet ... SI4920DY-T1-E3-S. Unit Weight: 0.006596 oz. Products found: To show similar ...

Parameters. Case: SOP-8. DC amperage: 8.50 A. DC voltage: 30.00 V. Power: 3.10 W. Transistor type: MOS N-FET. Technical documentation.

Part #: SI4920DY-T1. Download. File Size: 225Kbytes. Page: 8 Pages. Description: Dual N-Channel 30-V (D-S) MOSFET. Manufacturer: Vishay Siliconix.