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SI2331DS-T1-E3 ; Input Capacitance (Ciss) (Max) @ Vds. 780 pF @ 6 V ; FET Feature. - ; Power Dissipation (Max). 710mW (Ta) ; Operating Temperature. -55°C ~ 150°C ( ...
Oct 31, 2006 · Si2333DS-T1-E3 Replaces Si2331DS-T1-E3. Si2333DS-T1 Replaces Si2331DS-T1. NS denotes parameter not specified in original datasheet.
SI2331DS-T1-E3 from www.mouser.com
SI2323DS-T1-E3 Vishay Semiconductors MOSFET 20V 3.7A 0.039Ohm datasheet, inventory, & pricing.
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Case/Package, TO-236-3. Continuous Drain Current (ID), 3.2A. Drain to Source Breakdown Voltage, 20V. Drain to Source Resistance, 48mR.
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SI2331DS-T1-E3. MOSFET P-CH 12V 3.2A SOT23-3. MOSFET P-CH 12V 3.2A SOT23-3, 0. Tape & Reel (TR). -. View Details · SOT-23-3. SI2331DS-T1-GE3. MOSFET P-CH 12V ...
SI2331DS-T1-E3 MOS Price & Stock. Distributors. 4 Star; AAAChips; ACDS; ACME; AllChip Elec; Allchips; Allelco; AnLin; Anterwell; Anywayele; APS; Ariat ...
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Jul 17, 2006 · Ordering Information: Si2331DS-T1. G. S. D. Top View. 2. 3. TO-236. (SOT-23). 1. Si2331DS *(E1). *Marking Code. Si2331DS-T1-E3 (Lead (Pb)-free).
SI2331DS-T1-E3 from www.sicstock.com
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SI2331DS-T1-E3 SOT-23-3 (TO-236) MOSFET P-CH 12V SOT23-3 ; Rds On (Max) @ Id Vgs, 48 mOhm @ 3.6A 4.5V ; Vgs(th) (Max) @ Id, 900mV @ 250?A ; Gate Charge (Qg) @ Vgs ...
Mfg Part #: SI2331DS-T1-E3 (New Parts in Stock). Proactive Components, Inc. and ProactiveComponents.com are your source for SI2331DS-T1-E3.