Maximum Junction-to-Ambienta t ≤ 5 s. RthJA. 90. 115. °C/W. Steady State. 130. 166. Maximum Junction-to-Foot (Drain). Steady State. RthJF. 60. 75. Page 2. www.
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Order today, ships today. SI2304BDS-T1-E3 – N-Channel 30 V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) from Vishay Siliconix.
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These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage ...
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SI2304BDS-T1-GE3 Vishay Semiconductors MOSFET 30V 3.2A 1.08W 70mohm @ 10V datasheets, pricing, and inventory.
The SI2304BDS-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode. 100% Rg tested; -55 to 150°C Operating temperature ...
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SI2304BDS-T1-E3 Vishay Intertech $0.3086 - 30V 2.6A 750mW 70mΩ@10V,2.5A 3V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS datasheet, price, ...