Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages. Learn More.
$0.39
SI2304DS,215 ; Input Capacitance (Ciss) (Max) @ Vds. 195 pF @ 10 V ; FET Feature. - ; Power Dissipation (Max). 830mW (Tc) ; Operating Temperature. -65°C ~ 150°C (TJ).
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and ...
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Pack of 25 SI2304DS,215 Mosfet N-Channel 30 V 1.7A 830mW Surface Mount TO-236AB: ; Brand. N/A ; Color. N/A ; Accurate description. 5.0 ; Reasonable shipping cost.
Part #, Manufacturer, Description, Stock, Price, Buy. SI2304DS,215, Nexperia USA Inc. OEM/EMS/CM ONLY | NO BROKER QUOTES | Member of ERAI, GIDEP, ...
Table 2: Quick reference data. Symbol Parameter. Conditions. Min. Typ. Max. Unit. VDS drain-source voltage (DC). Tj = 25 to 150 °C.
Nexperia SI2304DS,215 technical specifications, attributes, and parameters. N-channel enhancement mode field-effect transistor SOT-23. MOSFET, N CHANNEL, 30V, ...
SI2304DS.215 - NXP - RoHSCompliant ✓ Delivery time On request ✓ Net price On request ✓ Order SI2304DS.215 now!
NXP Semiconductors/Freescale Semiconductor, Inc. SI2304DS,215
www.integrated-circuit.com › EIS-662470
$0.10
Buy SI2304DS,215 NXP Semiconductors/Freescale Semiconductor, Inc. at Integrated-Circuit.com, we have SI2304DS,215 in stock for immediate shipping.
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SI2304DS,215 TO-236AB MOSFET N-CH 30V 1.7A SOT23 ; Vgs(th) (Max) @ Id, 2V @ 1mA ; Gate Charge (Qg) @ Vgs, 4.6nC @ 10V ; Input Capacitance (Ciss) @ Vds, 195pF @ 10V.