Apr 5, 2010 · Ordering Information: Si1958DH-T1-E3 (Lead (Pb)-free). Si1958DH-T1-GE3 (Lead (Pb)-free and Halogen-free). N-Ch a nnel MO S FET. G2. D 2. S 2. N- ...
Technology, MOSFET (Metal Oxide). Configuration, 2 N-Channel (Dual). FET Feature, Logic Level Gate. Drain to Source Voltage (Vdss), 20V.
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SI1958DH-T1-E3 ; DESCRIPTION: MOSFET 2N-CH 20V 1.3A SC70-6 ; Manufacturer : Vishay Siliconix ; Current - Continuous Drain (Id) @ 25°C : 1.3A ; Drain to Source ...
FET Type, 2 N-Channel (Dual) ; Drain to Source Voltage (Vdss), 20V ; Current - Continuous Drain (Id) @ 25°C · 1.3A ; Rds On (Max) @ Id, Vgs, 205 mOhm @ 1.3A, 4.5V.
The SI1958DH-T1-E3 from Vishay is a 2 N-Channel (Dual) FET with a logic level gate feature. It is mounted using SMD (SMT) technology and is obsolete (EOL). The ...