Specifications ; Vds - Drain-Source Breakdown Voltage: 30 V ; Id - Continuous Drain Current: 13 A ; Rds On - Drain-Source Resistance: 8.3 mOhms ; Vgs - Gate-Source ...
RSS130N03FU6TB ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 30 V ; Current - Continuous Drain (Id) @ 25°C · 13A (Ta) ; Drive Voltage (Max Rds ...
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With a maximum power dissipation of 2W (Ta), this MOSFET can handle high power applications with ease. The device has a drain-source breakdown voltage of 30V, ...
$0.79
RSS130N03FU6TB ; DESCRIPTION: MOSFET 30V 13A N CHANNEL ; Manufacturer : ROHM Semiconductor ; Channel Mode : Enhancement ; Id - Continuous Drain Current : 13 A.
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Description: N-Channel Tape & Reel (TR) 8.1m Ω @ 13A, 10V 2000pF @ 10V 35nC @ 5V 8-SOIC (0.154, 3.90mm Width). Quantity: RFQ. Add to RFQ list. Delivery:.
RSS130N03FU6TB MOSFET. Datasheet pdf. Equivalent. Type Designator: RSS130N03FU6TB Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
In stock
RSS130N03FU6TB 8-SOP MOSFET N-CH 30V 13A 8SOIC ; Vgs(th) (Max) @ Id, 2.5V @ 1mA ; Gate Charge (Qg) @ Vgs, 35nC @ 5V ; Input Capacitance (Ciss) @ Vds, 2000pF @ 10V.
£1.00
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Manufacturer Part No. RSS130N03FU6TB. Manufacturer: ROHM. Order Code: 1525549. Channel Type: N Channel. Drain Source Voltage Vds:.
Current - Continuous Drain (Id) @ 25°C, 13A (Ta). Drain to Source Voltage (Vdss), 30V. Drive Voltage (Max Rds On, Min Rds On), 4V, 10V. FET Type, N-Channel.