SYMBOL. PARAMETER. CONDITIONS. RATINGS. UNIT. VDSS. Drain to source voltage. Vgs=0V. 30. V. VGSS. Gate to source voltage.
DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain:
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Details ; DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power ; FEATURES High power gain: Pout>2W, Gp>16dB ; APPLICATION
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RD02MUS1/2SC3630:射频场效应三极管，Mitsubishi品牌，品牌库存产品，批号09+10+，深圳润百年电子提供RD02MUS1/2SC3630产品，资料pdf，技术支持，库存数量有库存。
is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. OUTLINE DRAWING. FEATURES APPLICATION
RD02MUS1/2SC1947.pdf(863)-Mitsubishi-射频场效应三极管; RD02MUS1/2SC3404.pdf(312)-Mitsubishi-射频场效应三极管; RD02MUS1/2SC3630.pdf(308)-Mitsubishi-射频场效应 ...
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Apr 2, 2004 · RD02MUS1 is a MOS FET type transistor specifically designed for VHF ... RD02MUS1. 520MHz. Page 6. MITSUBISHI RF POWER MOS FET. RD02MUS1. Silicon ...
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