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PSMN012-100YS115 from www.mouser.com
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Specifications ; Transistor Polarity: N-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 60 A.
PSMN012-100YS115 from www.avnet.com
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PSMN012-100YS115 ; Drain Source On State Resistance, 12 ; Drain Source Voltage Vds, 100 ; MSL Level, MSL 1 - Unlimited ; No. of Pins, 5 ; Operating Temperature Max ...
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, ...
Missing: 100YS115 | Show results with:100YS115
$855.60
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PSMN012-100YS115 from www.digikey.lt
PSMN012-100YS,115 ; Input Capacitance (Ciss) (Max) @ Vds. 3500 pF @ 50 V ; FET Feature. - ; Power Dissipation (Max). 130W (Tc) ; Operating Temperature. -55°C ~ 175° ...
Order today, ships today. PSMN012-100YS,115 – N-Channel 100 V 60A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8 from Nexperia USA Inc..
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PSMN012-100YS N-channel 100V 12m standard level MOSFET in LFPAK Rev. 04 23 February 2010 Product data sheet 1. Product profile 1.1 General description ...
Description. PSMN012100YS115; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:60A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(ON):0.01OHM ...
Manufacturer Part Number. PSMN012-100YS,115 ; Description. MOSFET N-CH 100V 60A LFPAK ; Manufacturer. NXP Semiconductors ; Datasheet. 1.PSMN012-100YS115.pdf (15 ...
Port: Hongkong,Shenzhen. Payment Terms: Western Union,T/T,Paypal. Supply Ability: 10000 pieces per Week. Core Processor: -. Program Memory Type: -.