plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body.

PMBFJ109,215 ; Input Capacitance (Ciss) (Max) @ Vds. 30pF @ 10V (VGS) ; Resistance - RDS(On). 12 Ohms ; Power - Max. 250 mW ; Operating Temperature. 150°C (TJ).

Specifications ; Id - Continuous Drain Current: 40 mA ; Rds On - Drain-Source Resistance: 12 Ohms ; Pd - Power Dissipation: 250 mW ; Series: PMBFJ109.

Sep 20, 2011 · Table 6. Static characteristics. Tj = 25 °C. Symbol Parameter. Conditions. Min Typ Max Unit. IGSS gate-source leakage current.

NXP eIQ for next generation of edge applications: Highly scalable, area and power efficient machine learning accelerator core architecture. 19 ...

Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio ...

Rf Jfet, N Channel, 25V, 40Ma, 3-Sot-23; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss Min:-; Zero Gate Voltage Drain Current Idss ...

PMBFJ109 PHILIPS Encapsulation:SOT-23 JFET, N-CH SOT-23 1 reel 3000 pcs ; Condition. New ; Quantity. 2 available ; Item Number. 132303017090 ; Brand. Philips ; Model.

Specifications ; Brand, NXP Semiconductors ; Height, 1 (Max) mm ; Length, 3 (Max) mm ; Maximum Drain Gate Voltage, - 25 V ; Product Type, JFETs.

General description. 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits