QUICK REFERENCE DATA. SYMBOL PARAMETER. CONDITIONS. TYP. MAX. UNIT. VCESM. Collector-emitter voltage peak value. VBE = 0 V.
Missing: LF | Show results with:LF
$9.99 2-day delivery 30-day returns
Specifications ; DC Current Gain hFE Max: 40 ; Height: 9.4 mm ; Length: 10.3 mm ; Product Type: BJTs - Bipolar Transistors.
Missing: LF | Show results with:LF
30-day returns
Order today, ships today. PHE13009/DG,127 – Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB from WeEn Semiconductors.
Missing: LF | Show results with:LF
PHE13009 Datasheet, Equivalent, Cross Reference Search. Type Designator: PHE13009 Material of Transistor: Si Polarity: NPN Maximum Collector Power ...
The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, ...
$0.86 $9.99 delivery 30-day returns
Specifications ; Collector-Emitter Saturation Voltage: 320 mV ; Maximum DC Collector Current: 12 A ; Pd - Power Dissipation: 80 W ; Gain Bandwidth Product fT: -.
Missing: LF | Show results with:LF
QUICK REFERENCE DATA. SYMBOL PARAMETER. CONDITIONS. TYP. MAX. UNIT. VCESM. Collector-emitter voltage peak value. VBE = 0 V.
$25.80 delivery In stock
WeEn Semiconductors PHE13009,127 | Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB - This product is available in Transfer Multisort Elektronik.
Missing: LF | Show results with:LF
PHE13009. High voltage, high speed NPN planar ... PHE13009, VCESM, collector-emitter peak voltage, VBE = 0 V ... MSL LF. PHE13009, PHE13009,127, PHE13009, Leaded E
The PHE13009 is a silicon npn power switching ... PHE13009. MECHANICAL DATA. Dimensions in mm. Net Mass: 2 g ... consequence of its use. Publication thereof does ...
Missing: LF | Show results with:LF
ALLDATASHEET- World's 1st — Phe13009 Datasheet, Distributors and Pricing. Free...