GENERAL DESCRIPTION. N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,.

GENERAL DESCRIPTION. N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,.

PHB11N50E MOSFET. Datasheet pdf. Equivalent. Type Designator: PHB11N50E Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ...

The PHB11N50E is supplied in the SOT404 surface mounting package. Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ...

PHB11N50E · PHILIPS-PHB11N50E Datasheet 102Kb/9P, PowerMOS transistors Avalanche energy rated. December 1998 Rev 1.000. PHB11N50E · PHILIPS-PHB11N50E Datasheet

PHW11N50E MOSFET. Datasheet pdf. Equivalent. Type Designator: PHW11N50E Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ...

PHB11N50E · PHILIPS-PHB11N50E Datasheet 102Kb/9P, PowerMOS transistors Avalanche energy rated. December 1998 Rev 1.000. PHB11N50E · PHILIPS-PHB11N50E Datasheet

Part Number: PHB11N50E ; Supply Ability: 5000 ; Qty; 1~5000 ; Unit Price; Negotiable ; Processing time; 15 Days.

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable ...