Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45% Typ at 35.5 dBm
PF01411B. MOS FET Power Amplifier Module for E-GSM Handy Phone. ADE-208-434B (Z). 3rd Edition. November 1, 1997. Application. • For E-GSM class4 880 to 915 ...
Rating
(10)
Buy original and new PF01411B from HITACHI at Lisleapex Electronic. Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, Hybrid, RF-K-4, 6 PIN.
PF01411B. MOS FET Power Amplifier Module for E-GSM Handy Phone. ADE-208-434B ... PF01411B. 2. Electrical Characteristics (Tc = 25°C). Item. Symbol. Min. Typ. Max.
Rating
The PF01411B is Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, Hybrid, RF-K-4, 6 PIN, buy PF01411B from HITACHI LTD at Ovaga Technologies.
PF01411B datasheet - MOSFET Power Amplifier Module For E-gsm ...
www.digchip.com › datasheets › parts
The is a micropower operational amplifier featuring rail-to-rail input and output performance in Micrel's IttyBittyTM SOT-23-5 package. The MIC7111 is ideal for ...
PF01411B - MOS FET Power Amplifier Module for E-GSM Handy Phone ; M67799UHA, RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-490MHz, 7W, FM PORTABLE RADIO
High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB ...
€3.25
Buy Hitachi PF01411B - MOS FET Power Amplifier Module for GSM Handy Phone online at best price. Fast and secure delivery worldwide.
