Specifications ; Package / Case: SC-75-3 ; DC Collector/Base Gain hfe Min: 30 ; Collector- Emitter Voltage VCEO Max: - 50 V ; Continuous Collector Current: - 100 mA.
Order today, ships today. PDTA123EE,115 – Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount SC-75 from NXP USA Inc..
PDTA123EE115 | NXP | Request now from stock | IC-Direct.com
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Manufacturer: NXP. Part Number: PDTA123EE115. Description: TRANSISTORS Small Signal Bipolar Transistors. To Results Request now. IC-Direct Logo. Our promise.
NXP Semiconductors PDTA123EE,115 ; Тип монтажа. Англ.: Mounting Type. Surface Mount ; Resistor - Emitter Base (R2) (Ohms). Resistor - Emitter Base (R2) (Ohms).
PDTC123EE,115, Philips Semiconductors, 1050, 0606, 13.03.2024 ; PDTA123EE, NXP, 2616, 1109+PBF, 13.03.2024.
BRT TRANSISTOR, PNP, -50V, -100MA, 2.2KOHM / 2.2KOHM, 3-SOT-416. Collector Emitter Voltage V(br)ceo:-50V Continuous Collector Current Ic:-100mA
VS. DDTA123EE-7-F · PDTA123EE,115. Diodes: Nexperia. Ver PDF: Hojas de datos: Ver PDF. Semiconductores y Activos， Discreta， Transistores， BJTs ...
PDTA123EE - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT323 (SC-70); Container: Tape reel smd 100 mA, 50 V, PNP, Si, ...
DTA123EETL ; PDTA123EE,115 . Las diferencias entre DTA123EETL y PDTA123EE,115, el comparar en PDTA123EE,115 y DTA123EETL.
♢ 771-PDTA123EE115. SOT-416. PNP -50V 2.2kΩ/2.2kΩ .33 .222 .093. ♢ 771-PDTA124TU-T/R. SOT-323. PNP -50V 22kΩ/Open .38 .216 .093. ♢ 771-PDTA115EE115. SOT-416.