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A 150W, 28/32V LDMOS FET designed for wide-band communication and ISM applications. Learn More.
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Order today, ships today. PD20010-E – RF Mosfet 13.6 V 150 mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead) from STMicroelectronics. Pricing and Availability on ...
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Specifications ; Pd - Power Dissipation: 59 W ; Product Type: RF MOSFET Transistors ; Series: PD20010-E ; Factory Pack Quantity: Factory Pack Quantity: 600.
TRANS RF N-CH FET POWERSO-10RF (PD20010-E). Part Number: PD20010-E. Documents / Media: ...
Download the PD20010-E datasheet from STMicroelectronics. Transistor MOSFET N-CH 40V 5A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube.
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PD20010-E Semiconductors from ST MICRO 2-Year Warranty - RF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF; DRAIN SOURCE VOLTAGE VDS:40V; CONTINUOUS DRAIN CURRENT ...
It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.
PD20010-E ; Transistor Supply Voltage(Vdd or Vcc) nom (V). 13,6 ; Power Gain(PG) nom (dB). 11 ; Output Power(Pout) nom (W). 10 ; Frequency nom (MHz). 2000.
May 23, 2012 · The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, ...
It is designed for high gain, broadband commercial and industrial applications. It operates V in common source mode at frequencies to 1 GHz. PD20010-E boasts ...