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Specifications ; Emitter- Base Voltage VEBO: 6 V ; Collector-Emitter Saturation Voltage: 290 mV ; Maximum DC Collector Current: 1 A ; Pd - Power Dissipation: 2 W.
$1,129.80
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5160T. Key Features. Low collector-emitter saturation voltage VCEsat; High collector ...
Order today, ships today. PBSS4160T,215 – Bipolar (BJT) Transistor NPN 60 V 1 A 220MHz 400 mW Surface Mount TO-236AB from Nexperia USA Inc..
7-day returns
PBSS4160T,215 from Nexperia - Bipolar Transistors - BJT is available for JLCPCB assembly, check the stock, pricing and datasheet, and let JLCPCB helps you ...
$3.35 15-day returns
20PCS/Lot PBSS4160T PBSS4160T215 SOT-23-3 Marking：WU5 New original NPN transistor. 1 sold. Delivery. Shipping: US $1.24. Estimated delivery between Jun 18 ...
Brand, Nexperia. Description. Bipolar (BJT) Transistor NPN 60 V 1 A 220MHz 400 mW Surface Mount TO-236AB. Categories. Discrete Semiconductors.
$0.03 to $0.31
Transistor Polarity, NPN. Collector Emitter Voltage V(br)ceo, 60V. Transition Frequency ft, 220MHz. Power Dissipation Pd, 270mW. DC Collector Current, 1A.
Port: Hongkong,Shenzhen. Payment Terms: Western Union,T/T,Paypal. Supply Ability: 10000 pieces per Week. Core Processor: -. Program Memory Type: -.
In stock
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter ...