In stock
Specifications ; Collector- Emitter Voltage VCEO Max: 60 V ; Collector- Base Voltage VCBO: 80 V ; Emitter- Base Voltage VEBO: 5 V ; Collector-Emitter Saturation ...
Buy Nexperia PBSS4160DS115 in Avnet APAC. View Substitutes & Alternatives along with datasheets, stock, pricing and search for other Bipolar Transistor ...
NexperiaPBSS4160DS,115GP BJT ; Maximum Operating Temperature (°C), 150 ; Packaging, Tape and Reel ; Supplier Temperature Grade, Automotive ; Mounting, Surface Mount.
PBSS4160DS 115 Nexperia Prices & Inventory - Semiconductors
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$0.07 to $0.47
Transistor Polarity, NPN. Collector Emitter Voltage V(br)ceo, 60V. Power Dissipation Pd, 420mW. DC Collector Current, 1A. DC Current Gain hFE, 500hFE.
In stock
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter ...
We have PBSS4160DS,115 inventory of electronic components, data sheet, welcome to contact us for price or purchase PBSS4160DS,115.
PBSS4160DS115, NEXPERIA. May Be Interested. Part Number, Manufacturer, Packaging, Description. XC6VLX130T-2FFG484I, XILINX, FPGA Virtex-6 LXT Family 128000 ...
Low collector-emitter saturation voltage VCEsat; High collector current capability: IC and ICM; High collector current gain (hFE) at high IC ...
NXP PBSS4160DS115(700個セット).