Order today, ships today. NTD2955-1G – P-Channel 60 V 12A (Ta) 55W (Tj) Through Hole IPAK from onsemi. Pricing and Availability on millions of electronic ...
Specifications ; Vds - Drain-Source Breakdown Voltage: 60 V ; Id - Continuous Drain Current: 12 A ; Rds On - Drain-Source Resistance: 180 mOhms ; Vgs - Gate-Source ...
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−.
$0.58
NTD2955-1G by onsemi. onsemi. NTD2955-1G. NTD2955-1G P-channel MOSFET Transistor, 12 A, 60 V, 3-Pin IPAK | ON Semiconductor NTD2955-1G. $ 0.578. EOL. Add to BOM.
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ON Semiconductor NTD2955-1G. NTD2955-1G P-channel MOSFET Transistor, 12 A, 60 V, 3-Pin IPAK. Mfr. Part #: NTD2955-1G / RS Stock #: 70341291.
This Power MOSFET is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications ...
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This Power MOSFET is designed to withstand high energy in the Avalanche and Commutation Modes.Designed for low voltage, high speed.
1 Channel. Vds - Drain-Source Breakdown Voltage: 60 V. Id - Continuous Drain Current: 12 A. Rds On - Drain-Source Resistance: 155 mOhms. Vgs - Gate-Source ...
Part #: NTD2955-1G. Download. File Size: 119Kbytes. Page: 8 Pages. Description: Power MOSFET. Manufacturer: ON Semiconductor.
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Details. This Power MOSFET is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching ...