Jun 20, 2012 · FEATURES. • This device is an ideal choice for low noise, high-gain at low current amplifications. - NF = 0.9 dB TYP., Ga = 18.0 dB TYP.
NESG2021M05-A CEL RF Bipolar Transistors NPN SiGe High Freq datasheet, inventory, & pricing.
FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP.
Jun 20, 2012 · FEATURES. • This device is an ideal choice for low noise, high-gain at low current amplifications. NF = 0.9 dB TYP., Ga = 18.0 dB TYP.
NEC's NESG2021M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low ...
NONLINEAR MODEL NESG2021M05. Base. Emitter. Collector. LBPKG. LB. LEPKG. LE. LCPKG ... NESG2021M05. CCB. 0.001 pF. CCE. 0.18 pF. LB. 0.35 nH. LE. 0.16 nH. CCBPKG.
Order today, ships today. NESG2021M05-EVNF58 – - NESG2021M05@5.8GHz Transistor 5.2GHz Evaluation Board from CEL. Pricing and Availability on millions of ...
NESG2021M05 Datasheet, Equivalent, Cross Reference Search. Type Designator: NESG2021M05 SMD Transistor Code: T1G Material of Transistor: SiGe. Polarity: NPN
$4.00
NESG2021M05-T1 Low Noise, High Gain Amplified Flat Lead 4-Lead (M05. 1/1. 0. US $4.70. / lot. (5 Pieces). Price shown before tax. Extra 2% off with coins.
NEC's NESG2021M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low ...