The NE5510279A RF Power MOSFET is only supported for customers who have already adopted these products.
$301.04
Order today, ships today. NE5510279A-T1-A – RF Mosfet 4.8 V 300 mA 1.8GHz 16dB 2W 79A from Renesas Electronics Corporation. Pricing and Availability on ...
Part #: NE5510279A. Download. File Size: 39Kbytes. Page: 5 Pages. Description: 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS.
DESCRIPTION. The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets.
4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET ...
$13.11
NE5510279A-T1-A NE5510279A-T1 NE5510279A SMD 5pcs/lot Free shipping. 1 sold. Delivery. Shipping: US $1.98. Estimated delivery between May 08 - 14. Collect a US ...
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OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS. Stock Status:10000. Minimum: 1. Seller:Utsource. ≥1: US $3.28800. US $2.95920.
A$20.64 In stock
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Apr 1, 2010 · The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets ...