The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it ...
The NE3210S01 Low Noise GaAs FET, HJ-FET is only supported for customers who have already adopted these products.
Sep 13, 2006 · NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped.
$1.43
Order today, ships today. NE3210S01-T1B – RF Mosfet 2 V 10 mA 12GHz 13.5dB SMD from CEL. Pricing and Availability on millions of electronic components from ...
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NE3210S01-T1B-A NEC/CEL RF JFET Transistors Super Lo Noise HJFET datasheet, inventory, & pricing.
DESCRIPTION. The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its.
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it ...
Part #: NE3210S01-T1. Download. File Size: 414Kbytes. Page: 7 Pages. Description: SUPER LOW NOISE HJ FET. Manufacturer: California Eastern Labs.
Details, datasheet, quote on part number: NE3210S01-T1 ; Description, X to ku Band Super Low Noise Amplifer N-channel Hj-FET ; Company, NEC Electronics Inc.
Celem Power Capacitors, FET RF 4V 12GHZ S01 NE3210S01-T1 Part Details, 33300. 4 $14.1310; 9 $11.5950; 14 $11.2320; 19 $10.8700; 24 $10.5080; 32 $9.4210