SO−8 N−Channel Enhancement Mode Power Field Effect. Transistors are Produced using onsemi's proprietary, high cell density,. DMOS technology.
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Order today, ships today. NDS9945 – Mosfet Array 60V 3.5A 900mW Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic ...
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Specifications ; Vds - Drain-Source Breakdown Voltage: 60 V ; Id - Continuous Drain Current: 3.5 A ; Rds On - Drain-Source Resistance: 76 mOhms ; Vgs - Gate-Source ...
Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ.
NDS9945 Rev.B. 3.5 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V,. RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High ...
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Buy onsemi NDS9945 in Reel. Dual N-Channel 60 V 0.3 Ohm 30 nC 2 W DMOS Surface Mount Mosfet - SOIC-8 from Future Electronics.
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high ...
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The NDS9945 is a 60V Dual N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology.
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NDS9945. Richardson RFPD #: NDS9945. Description: Power MOSFET Transistor. Min/Mult: 2,500/1. Datasheet: NDS9945 Data Sheet. ROHS Compliant. Dual N-Channel ...
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