This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
Specifications ; Vds - Drain-Source Breakdown Voltage: 500 V ; Id - Continuous Drain Current: 2 A ; Rds On - Drain-Source Resistance: 6 Ohms ; Vgs - Gate-Source ...
MTP2P50 MOSFET. Datasheet pdf. Equivalent. Type Designator: MTP2P50 Type of Transistor: MOSFET Type of Control Channel: P -Channel