(2) Switching characteristics are independent of operating junction temperature. Page 4. MTD1N60E. 3. Motorola TMOS Power MOSFET Transistor Device Data.

Overview ... This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In ...

s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; rDS(on): 0.0028 ohms ; Package Type: GREEN, PLASTIC PACKAGE-7 ; Number of ...

MTD1N60E Datasheet. Part #: MTD1N60E. Datasheet: 266Kb/10P. Manufacturer: Motorola, Inc. Description: TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM.

Jan 28, 2010 · Part Number, MTD1N60E. Manufacturer, Motorola. Title, TMOS POWER FET. Description, MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document ...

Datasheet MTD1N60E (Motorola) ; Manufacturer, Motorola ; Description, TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount. N−Channel Enhancement− ...

U · 20V ; R · <8Ω/500mA ; P · 40W ; TON/T · 34/70nS ; the MTD1N60E is a silicon N - MOSFET transistor, Uds=600V, Ids=1A, applications: VFET.

1N60E MOSFET. Datasheet pdf. Equivalent. Type Designator: 1N60E Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 1 ...