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Order today, ships today. MMBTA06LT1G – Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 225 mW Surface Mount SOT-23-3 (TO-236) from onsemi.
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Bipolar junction transistor featuring high current, low saturation voltage and high-speed switching. Learn More.
Emitter−Base Voltage. VEBO. 4.0. Vdc. Collector Current − Continuous. IC. 500. mAdc. Electrostatic Discharge. ESD. HBM Class 3B. MM Class C. CDM Class IV.
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MMBTA06LT1G is a driver transistor. Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25 ...
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The MMBTA06LT1G is a NPN silicon driver transistor with voltage of 80 V, available in a SOT-23 package. Features: S Prefix for Automotive and Other Applications ...
$0.03
The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower ...
$0.03
MMBTA06LT1G onsemi $0.0339 - 80V 225mW 100@100mA,1V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS datasheet, price, inventory C77760.
In stock
MMBTA06LT1G is a driver transistor. Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C); Emitter-base breakdown voltage is ...
$0.04
MMBTA06LT1G onsemi $0.0383 - 80V 225mW 100@100mA,1V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS datasheet, price, inventory C77760.
MMBTA06LT1G is a driver transistor. Key Features. Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C); Emitter ...