Order today, ships today. MMBT5550 – Bipolar (BJT) Transistor NPN 140 V 600 mA 50MHz 350 mW Surface Mount SOT-23-3 from onsemi. Pricing and Availability on ...
Designed for general-purpose amplifier applications and features low VCE <0.5V. ... Combination of low saturation voltage and high gain low VCE(sat) NPN ...
MMBT5550. MMBT5551. V(BR)CEO. 140. 160. -. -. Vdc. Collector-Base Breakdown Voltage. (IC = 100 μAdc, IE = 0). MMBT5550. MMBT5551. V(BR)CBO. 160. 180. -. -. Vdc.
General Purpose and Low VCE(sat) Transistors | MMBT5550 · NPN Epitaxial Silicon Transistor · Overview · Product List · Privacy Preference Center.
MMBT5550-TP Micro Commercial Co | Discrete Semiconductor Products
www.digikey.com › products › detail
In stock
MMBT5550-TP ; Transistor Type. NPN ; Current - Collector (Ic) (Max). 600 mA ; Voltage - Collector Emitter Breakdown (Max). 140 V ; Vce Saturation (Max) @ Ib, Ic.
MMBT5550. Small Signal Bipolar Transistors | Status : Active. MMBT5550. Package Type:SOT-23; Packing Info: Tape: 3K/Reel , 120K/Ctn;; Category:Small Signal ...
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified). Parameter. Symbol. Test conditions. Min. Typ. Max. Unit. Collector-base breakdown voltage.
MMBT5550. SOT-23 BIPOLAR TRANSISTORS. TRANSISTOR(NPN). Dimensions in inches and ... RATING AND CHARACTERISTICS CURVES ( MMBT5550 ). 2.5. Figure 5. Temperature ...
MMBT5550/MMBT5551. SMD High Voltage Transistor (NPN) www.taitroncomponents.com. Page 2 of 6. Electrical Characteristics (T Ambient=25ºC unless noted otherwise).