Epitaxial Planar Die Construction. • Low Saturation Voltage VCE(sat) < 300mV @ 150mA. • Complementary PNP Type: MMBT2907A.
MMBT2222A-7 Diodes Incorporated | Discrete Semiconductor Products
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Order today, ships today. MMBT2222A-7 – Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 310 mW Surface Mount SOT-23-3 from Diodes Incorporated.
Characteristic. Symbol. MMBT2222A. Unit. Collector-Base Voltage. VCBO. 75. V. Collector-Emitter Voltage. VCEO. 40. V. Emitter-Base Voltage.
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MMBT2222A-7-F Diodes Incorporated $0.0243 - 40V 310mW 100@150mA,10V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS datasheet, price, ...
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The MMBT2222A-7 is a general purpose low power NPN transistor. It has an low collector emitter saturation voltage and a collector emitter voltage of 60 V. This ...