Did you mean: MJE350STU-OF
Designed for general-purpose amplifier applications and features low VCE <0.5V. ... Combination of low saturation voltage and high gain low VCE(sat) NPN ...
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$0.74
Order today, ships today. MJE350STU – Bipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126-3 from onsemi. Pricing and Availability on millions of
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MJE350STU onsemi US$0.3139 - 300V 20W 30@50mA,10V 500mA PNP TO-126 Bipolar Transistors - BJT ROHS datasheet, price, inventory C179749.
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MJE350STU ; Description: 300V 20W 30@50mA,10V 500mA PNP TO-126 Bipolar Transistors - BJT ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type: Wave Soldering.
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MJE350STU onsemi $0.2884 - 300V 20W 30@50mA,10V 500mA PNP TO-126 Bipolar Transistors - BJT ROHS datasheet, price, inventory C179749.
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Technical Specifications ; Number of Pins, 3 ; Weight, 761 mg ; Collector Base Voltage (VCBO), -300 V ; Collector Emitter Breakdown Voltage, 300 V ; Collector ...
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves ...
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arising out of the application or use of any ... arising out of the application or use of any product or circuit, and specifically ... MJE350 MJE350G MJE350STU.
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Symbol. Parameter. Test Condition. Min. Max. Units. BVCEO. Collector-Emitter Breakdown Voltage. IC = - 1mA, IB = 0. -300. V. ICBO. Collector Cut-off Current.
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Details, datasheet, quote on part number: MJE350STU ; Power - Max, 20W ; DC Current Gain (hFE) (Min) @ Ic, Vce, 30 @ 50mA, 10V ; Vce Saturation (Max) @ Ib, Ic, -.
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