MJE. 200. NPN Epitaxial Silicon Transistor. Absolute Maximum Ratings TC=25°C ... MJE. 200. Rev. A2, June 2001. Typical Characteristics. Figure 1. DC current Gain.
MJE200 Transistor Datasheet pdf, MJE200 Equivalent. Parameters and Characteristics.
Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications.
MAXIMUM RATINGS: (TA=25°C). SYMBOL. UNITS. Collector-Base Voltage. VCBO. 40. V. Collector-Emitter Voltage. VCEO. 25. V. Emitter-Base Voltage.
MJE200 (NPN). MJE210 (PNP). 30. MJE200. MJE210. IC, COLLECTOR CURRENT (AMP). IC, COLLECTOR CURRENT (AMP). hFE. , DC CURRENT GAIN. Figure 8. DC Current Gain.
Designed for low voltage, low-power, high-gain audio amplifier applications. Similar Part No. - MJE200 ...
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are ...
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Type: NPN; Collector-Emitter Voltage, max: 25 V; Collector-Base Voltage, max: 40 V; Emitter-Base Voltage, max: 8 V; Collector Current − Continuous, ...
Sep 4, 2013 · Part Number, MJE200. Manufacturer, Inchange Semiconductor. Title, Silicon NPN Power Transistor. Description, ·Collector–Emitter Sustaining ...