The MGF4714CP low-noise HEMT(High Electron Mobility. Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost ...
€2.50
Low noise InGaAs-HEMT amplifier up to 18 GHz, IDSS 30mA with VDS 2V, 86 mil plastic package. - 0.3 dBNF 15 dBG @ 4 GHz - 0.6 dBNF 13 dBG @ 10 GHz
The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost ...
The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer hig...
$5.81
MGF4714CP GaAs HEMT LOW NOISE InGaAs HEMT use in L to Ku band amplifiers High associated. 1/1. 0. US $5.81/ lot. US $6.6012% off. (10 Pieces). Price shown ...
Part No. MGF4714CP 4714CP. Description, From old datasheet system. PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT 塑料模具包装低噪音铟镓砷迁移率晶体管 ...
MGF4714AP Datasheet. 17Kb/3P. Part #: MGF4714CP. Manufacturer: Mitsubishi Electric Semiconductor. Description: PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT.
1 x MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT Mitsubish 1pcs ; Item number. 152172318902 ; Brand. Mitsubishi ; Accurate description. 4.9 ; Reasonable ...
MGF4714CP. MGF4714CP. Part No.: MGF4714CP MFG: MIT MIT D/C: 10+. Packing: SMT86 Original price: 0. QTY: 25298. PDF: Order hotline: 86755-83294757. To view the ...
The MGF4714CP device features a maximum noise of 1 dB with a minimum associated gain of 11 dB at 12 GHz and is easily matched to 50-ohm stripline. The device ...