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The MG100N2YS1 is an N-channel insulated gate bipolar transistor (IGBT) module manufactured by Toshiba. The module is also equipped with a built-in freewheeling ...
Part #: MG100N2YS1 ... Manufacturer: Toshiba America Electronic Components, Inc. Description: Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N- ...
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MG100N2YS1 is a(n) 1000V, 100A IGBT Power Transistor Module. . Target Applications. MG100N2YS1 and other IGBT (Insulated Gate Bipolar Transistor) transistor ...
SENSOR, MINI-BEAM, RETROREFLECTIVE SENSING, 5 METER MAX SENSING DISTANCE, 10/30 VDC INPUT, NPN/ PNP ...
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$41,667.00
Find the best pricing for Toshiba MG100N2YS1 by comparing bulk discounts from 2 distributors. Octopart is the world's source for MG100N2YS1 availability, ...
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Brand: TOSHIBA | Number: MG100N2YS1 |Specif.: GTR SWITCHING | Condition: NEW | Type: MODULE | Country of Origin: JAPAN | SKU: TO100049 | Price: $106.674.
MG100N2YS1 Datasheet. 299Kb/3P. Part #: MG100N2YK1. Manufacturer: List of Unclassifed Manufacturers. Description: TRANSISTOR MODULES. 2 Results.
The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly simplify mounting. A wide variety of devices are ...
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