20 A Total (10 A Per Diode Leg). • Guard−Ring for Stress Protection. • Low Forward Voltage. • 175°C Operating Junction Temperature.
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MBR20100CT-G1 ; Voltage - DC Reverse (Vr) (Max). 100 V ; Current - Average Rectified (Io) (per Diode). 10A ; Voltage - Forward (Vf) (Max) @ If. 840 mV @ 10 A.
Schottky Barrier Chip. • Guard Ring Die Construction for Transient Protection. • Low Power Loss, High Efficiency. • High Surge Capability.
MBR20100CT-M3/4W. 1.88. 4W. 50/tube. Tube. 0. 4. 8. 12. 20. 0. 50. 100. 150. 16. Case Temperature (°C). A v erage F orw ard Current (A). Resistive or Inductive ...