VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333. • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400. • Double-data-rate architecture; ...
K4H511638D-UCB3 Integrated Circuits from SAMSUNG In Stock, Order Now! Same Day Shipping, 2-Year Warranty - , DDR1 DRAM, 32MX16, 0.7NS, CMOS, 512MB, ...
$4.40
1PCS K4H511638D-UCB3 DDR SDRAM SSOP66 new ; Quantity. 11 sold. More than 10 available ; Item Number. 123368473169 ; Model. K4H511638D-UCB3 ; Accurate description.
Part #: K4H511638D-UCB3 ; Part Category: Memory ICs ; Manufacturer: Samsung Semiconductor Division ; Description: DDR1 DRAM, 32MX16, 0.7ns, CMOS, PDSO66.
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K4H511638D-UCB3 - Samsung ; Memory Width. 16 ; Standby Current-Max. 0.005 A ; Memory Density. 536870912 bit ; I/O Type. COMMON ; Memory IC Type. DDR DRAM.
$47.00
SAMSUNG K4H511638D-UCB3 / K4H511638DUCB3 (BRAND NEW) ; PLCCenter Surplus Industrial (161476) ; Item description from the sellerItem description from the seller.
Find the best pricing for Samsung K4H511638DUCB3 by comparing bulk discounts from 7 distributors. Octopart is the world's source for K4H511638DUCB3 ...
PLN 4.57
Scope of business: auto IC, digital to analog circuit, single chip microcomputer, photoelectric coupling, storage, three-terminal voltage regulator, SCR, field ...
Part #: K4H511638D. Download. File Size: 366Kbytes. Page: 24 Pages. Description: 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS ...
