$9.25
Specifications ; Vds - Drain-Source Breakdown Voltage: 500 V ; Id - Continuous Drain Current: 8 A ; Rds On - Drain-Source Resistance: 1.2 Ohms ; Vgs - Gate-Source ...
$9.20
IXTH8P50 ; Power Dissipation (Max). 180W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ) ; Mounting Type. Through Hole ; Supplier Device Package. TO-247 (IXTH).
P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages.
$9.12
P-channel enhancement mode avalanche rated standard power MOSFET suitable for use in high-side switches, push pull amplifiers, DC choppers, automatic test ...
Standard Power MOSFET. P-Channel Enhancement Mode Avalanche Rated. Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process
$5.35 to $10.08
P-channel enhancement mode avalanche rated standard power MOSFET suitable for use in high-side switches, push pull amplifiers, DC choppers, automatic test ...
Symbol. Test Conditions. Maximum Ratings. VDSS. TJ. = 25°C to 150°C. -500. V. VDGR. TJ. = 25°C to 150°C; RGS = 1 MΩ. -500. V. VGS. Continuous.
IXYS IXTH8P50 | Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO247-3; 400ns - This product is available in Transfer Multisort Elektronik.
Details, datasheet, quote on part number: IXTH8P50 ; Category ; Description, Standard Power Mosfet P-channel Enhancement Mode Avalanche Rated ; Company, IXYS ...
In stock
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