$9.89
IXGT10N170 ; IGBT Type. NPT ; Voltage - Collector Emitter Breakdown (Max). 1700 V ; Current - Collector (Ic) (Max). 20 A ; Current - Collector Pulsed (Icm). 70 A.
This family of 1700V IGBTs are rugged NPT devices targeted for high voltage applications, requiring 10us short circuit withstand capability.
In stock
IXGT10N170 IXYS IGBT Transistors 20 Amps 1700 V 4 V Rds datasheet, inventory, & pricing.
IXGT10N170. DS98992A(10/08). High Voltage. IGBT. V. CES. = 1700V. I. C90. = 10A. V. CE(sat) ≤ 4.0V. Symbol Test Conditions. Maximum Ratings. VCES. TC = 25°C to ...
Specification ; Type of transistor. IGBT ; Technology. NPT ; Collector-emitter voltage. 1.7kV ; Collector current. 10A ; Power dissipation. 110W.
IXGT10N170 from Littelfuse/IXYS - IGBTs is available for JLCPCB assembly, check the stock, pricing and datasheet, and let JLCPCB helps you assemble the part ...
Part #: IXGT10N170. Download. File Size: 195Kbytes. Page: 5 Pages. Description: High Voltage IGBT. Manufacturer: IXYS Corporation.
Technical Specifications ; Mount, Surface Mount ; Weight, 4.500005 g ; Collector Emitter Breakdown Voltage, 1.7 kV ; Collector Emitter Saturation Voltage, 2.7 V.
Our product range is listed as following: bidirectional thyristor, reverse conducting thyristor, gate turn-off thyristor (GTO), gate-commutated thyristor (GCT), ...
$2,185.00
Specifications of IXGT10N170 ; Package / Case, TO-268-3, D³Pak (2 Leads + Tab), TO-268AA ; Operating Temperature, -55°C ~ 150°C (TJ) ; Mounting Type, Surface Mount.