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The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for ...
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IXFK98N50P3 ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 500 V ; Current - Continuous Drain (Id) @ 25°C · 98A (Tc) ; Drive Voltage (Max Rds ...
Find information for part IXFK98N50P3 from the Polar3™ Series N Channel HiPerFETs, or search for Power Semiconductors and more Discrete MOSFETs from ...
Symbol. Test Conditions. Maximum Ratings. VDSS. TJ. = 25 C to 150 C. 500. V. VDGR. TJ. = 25 C to 150 C, RGS = 1M .
Part #: IXFK98N50P3. Download. File Size: 138Kbytes. Page: 5 Pages. Description: Polar3 HiPerFET Power MOSFET. Manufacturer: IXYS Corporation.
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$27.50 15-day returns In stock
5PCS IXFK98N50P3 TO-264. 1/1. 1. US $27.50/ lot. (5 Pieces). Price shown before tax. Delivery guarantee. 5PCS IXFK98N50P3 TO-264. Delivery. Shipping: ...
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IXFK98N50P3IXYS ; Drain current. 98A ; Power dissipation. 1.3kW ; Case. TO264 ; On-state resistance. 50mΩ ; Mounting. THT.
The IXFK98N50P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest ...