IXFH6N100 IXYS MOSFET 1KV 6A datasheet, inventory, & pricing.
IXFH6N100 IXYS | Discrete Semiconductor Products - DigiKey
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IXFH6N100 ; Input Capacitance (Ciss) (Max) @ Vds. 2600 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 180W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate ...
The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery "free wheeling" ...
VDSS. TJ. = 25°C to 150°C. 6N90. 900. V. VDGR. TJ. = 25°C to 150°C; RGS = 1 MW. 6N100. 1000. V. VGS. Continuous. ±20. V. VGSM. Transient.
IXFH6N100 MOSFET. Datasheet pdf. Equivalent. Type Designator: IXFH6N100 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
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IXFH6N100 ; Drain-source On Resistance-Max, 2R ; Dual Supply Voltage, 1kV ; Fall Time, 60ns ; Gate to Source Voltage (Vgs), 20V ; Input Capacitance, 2.6nF.
IXFH6N100 from Littelfuse - MOSFETs is available for JLCPCB assembly, check the stock, pricing and datasheet, and let JLCPCB helps you assemble the part ...
$14.00
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