This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate.
POWER MOSFET Ease of Paralleling D BVDSS 200V Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 9.0AGSDescriptionGTO-220(P)DAPEC MOSFET ...
Part #: IRF630A. Download. File Size: 257Kbytes. Page: 7 Pages. Description: Advanced Power MOSFET. Manufacturer: Fairchild Semiconductor.
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IRF630A. BVDSS = 200 V. RDS(on) = 0.4 Ω. ID = 9 A. 200. 9. 5.7. 36. 162. 9. 7.2. 5.0. 72. 0.57. - 55 to +150. 300. 1.74. --. 62.5. --. 0.5. --. 30 +. _. ©1999 ...
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge.
DESCRIPTION. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching,.
IRF630A datasheet - 9A, 200V, 0.400 Ohm, N-channel Power MOSFETs
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These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand ...
$301.43
IRF630A_CP001 ; Part Status. Active ; Technology. - ; FET Feature. - ; Base Product Number. IRF630 ; Other Names. 2156-IRF630A_CP001. FAIFSCIRF630A_CP001.
IRF630 PRODUCT INFORMATION. Power MOSFET. vsh-img-product-image. FEATURES. Dynamic dV/dt rating. Repetitive avalanche rated. Fast switching.