IRLMS6702TRPBF ; Input Capacitance (Ciss) (Max) @ Vds. 210 pF @ 15 V ; FET Feature. - ; Power Dissipation (Max). 1.7W (Ta) ; Operating Temperature. -55°C ~ 150°C ( ...
Specifications ; Vds - Drain-Source Breakdown Voltage: 20 V ; Id - Continuous Drain Current: 2.3 A ; Rds On - Drain-Source Resistance: 200 mOhms ; Vgs - Gate-Source ...
Jan 14, 2005 · Fifth Generation HEXFET® power MOSFETs from. International Rectifier utilize advanced processing techniques to achieve extremely low on- ...
$0.72
IRLMS6702TRPBF Infineon Technologies $0.7234 - 20V 2.4A 1.7W 200mΩ@4.5V,1.6A 700mV@250uA P Channel SOT-23-6 MOSFETs ROHS datasheet, price, ...
The IRLMS6702TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon ...
$0.20
Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:Surface ...
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$0.21
May 29, 2024 · -20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageg. IRLMS6702 Datasheet PDF. IRF. HEXFET Power MOSFET.
IRLMS6702TRPBF | Infineon Technologies | MOSFETs - JLCPCB
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IRLMS6702TRPBF ; Package: SOT-23-6 ; Description: 20V 2.4A 1.7W 200mΩ@4.5V,1.6A 700mV@250uA 1PCSPChannel SOT-23-6 MOSFETs ROHS ; Datasheet: Download ; Source ...
IRLMS6702TRPBFINFINEON TECHNOLOGIES ; Drain-source voltage. -20V ; Drain current. -2.3A ; Power dissipation. 1.7W ; Case. TSOP6 ; Mounting. SMD.