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IRLML5203TRPBF ; Current - Continuous Drain (Id) @ 25°C · 3A (Ta) ; Drive Voltage (Max Rds On, Min Rds On). 4.5V, 10V ; Rds On (Max) @ Id, Vgs. 98mOhm @ 3A, 10V.
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Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ...
Apr 28, 2014 · IRLML5203TRPbF. Micro3™ (SOT-23). Tape and Reel. 3000. IRLML5203TRPbF. Package Type. Standard Pack. Orderable Part Number. Base Part Number. 1.
$0.12
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.098ohm; Rds(on) ...
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The IRLML5203TRPBF is a P-channel MOSFET with Drain- Source Voltage of -30 V, available in a MICRO-3 package. This device utilize advanced processing techniques ...
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These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
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Specifications ; Transistor Polarity: P-Channel ; Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 30 V ; Id - Continuous Drain Current: 3 A.
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The IRLML5203PBF is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ...
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IRLML5203TRPBF Infineon Technologies $0.1482 - 30V 3A 1.25W 98mΩ@10V,3A 2.5V@250uA P Channel SOT-23 MOSFETs ROHS datasheet, price, inventory C2592.
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