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IRLML2803TRPBF ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 30 V ; Current - Continuous Drain (Id) @ 25°C · 1.2A (Ta) ; Drive Voltage (Max ...
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Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ...
Apr 24, 2014 · IRLML2803TRPbF. Micro3™ (SOT-23). Tape and Reel. 3000. IRLML2803TRPbF. Package Type. Standard Pack. Orderable Part Number. Base Part Number. 1.
HEXFET™ variation total gate charge with temperature. The gate charge is a function of the die geometry, i.e. die area and thickness of the gate dielectric.
These 30V HEXFET Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution ...
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Features & Applications. The IRLML2803TRPBF is a 30 V drain-to-source voltage, 540 W power dissipation and 3.3 nC gate charge single N-Channel hexfet power ...
$0.11
IRLML2803TRPBF Infineon Technologies $0.1103 - 30V 1.2A 540mW 250mΩ@10V,910mA 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS datasheet, price, ...
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Infineon Technologies AGIRLML2803TRPBFMOSFETs. Trans MOSFET N-CH Si 30V 1.2A 3-Pin SOT-23 T/R. Download Datasheet. Symbols and Footprints. Buy Options
INFINEON TECHNOLOGIES IRLML2803TRPBF | Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23 - This product is available in Transfer Multisort Elektronik.
IRLML2803TRPBF N-Channel Power MOSFET 30V 1.2A ; SKU. A-6157 ; In stock Qty Available: 15 ; Quick Overview. INFINEON - Get It Fast - Same Day Shipping ...