Low gate charge Qg results in simple drive requirement. Improved gate, avalanche, and dynamic dv/dt ruggedness. Fully characterized capacitance and ...
IRFSL9N60A ; FET Type. N-Channel ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 600 V ; Current - Continuous Drain (Id) @ 25°C · 9.2A (Tc).
IRFSL9N60A. 12/23/98 www.irf.com. 1. PD - 91814A. Parameter. Max. Units. ID @ TC = 25°C. Continuous Drain Current, VGS @ 10V. 9.2. ID @ TC = 100°C.
Sep 15, 2008 · 9.2. A. TC = 100 °C. 5.8. Pulsed drain current a. IDM. 37. Linear derating factor. 1.3. W/°C. Single pulse avalanche energy b.
Ideal for switching applications and boasts a die-on resistance of approximately 1mΩ. Learn More. No ...
MFG Item Number. IRFSL9N60A ; Series. I2PAK ; Availability. Available For Back Order with an estimated ship date of Saturday, August 9th 2025. Call to verify lead ...
Part #: IRFSL9N60A. Download. File Size: 234Kbytes. Page: 10 Pages. Description: Power MOSFET. Manufacturer: Vishay Siliconix.
VISHAY / IR IRFSL9N60A spec. device function: mosfet; device package type: to-220; package: 50 PER TUBE; item per pack: 1. Item in stock can ship right now.
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Description: N-Channel Tube 750mOhm @ 5.5A, 10V ±30V 1400pF @ 25V 49nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA. Quantity: Buy Now. Add to Cart.
IRFSL9N60A MOSFET. Datasheet pdf. Equivalent. Type Designator: IRFSL9N60A Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...