This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate.
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IRF630 ; Current - Continuous Drain (Id) @ 25°C · 9A (Tc) ; Drive Voltage (Max Rds On, Min Rds On). 10V ; Rds On (Max) @ Id, Vgs. 400mOhm @ 4.5A, 10V ; Vgs(th) (Max) ...
DESCRIPTION. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching,.
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IRF630 STMicroelectronics MOSFET N-Ch 200 Volt 10 Amp datasheet, inventory, & pricing.
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge.
POWER MOSFET Ease of Paralleling D BVDSS 200V Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 9.0AGSDescriptionGTO-220(P)DAPEC MOSFET ...
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Transistor IRF630 MOSFET N Channel 200 Volt ; Peak Reverse Recovery Time, 20ns ; Channel Type, N ; Repetitive Peak Reverse Voltage, 200VDC ; Configuration, Single.
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IRF630NPBF N Channel Power Mosfet TO-220 RoHS Compliance; 175°C Operating Temperature ,Fast Switching; VDSS = 200V RDS(on) = 0.30Ω ID = 9.3A; IRF630 MOSFET ...
$600.00
Buy STMicroelectronics IRF630 in Tube. Single N-Channel 200 V 0.4 Ohm 31 nC 75 W Mesh overlay™ II Power Mosfet-TO-220-3 from Future Electronics.