IR MOSFET™ N-channel Power MOSFET ; Super-247 TO-274 package; 9 mOhm;
$8.61
IRFPS3810 ; Input Capacitance (Ciss) (Max) @ Vds. 6790 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 580W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
Sep 10, 2004 · The HEXFET® Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ...
Specifications ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 141 A ; Rds On - Drain-Source Resistance: 9 mOhms ; Vgs - Gate-Source ...
IRFPS3810 MOSFET. Datasheet pdf. Equivalent. Type Designator: IRFPS3810 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
$3.15
1pcs IRFPS3810 Power HEXFET Mosfet 580W 170A 100 Volt new ; Condition. New ; Quantity. 3 sold. More than 10 available ; Item Number. 123295109162 ; Brand. Unbranded ...
IRFPS3810 Datasheet by Infineon Technologies Americas Corp. ; HEXFET® Power MOSFET. The HEXFET® ; Parameter Max. Units ; ID @ TC = 100°C Continuous Drain Current, ...
IRFPS3810 Product details. Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on ...
In stock
5pcs IRFPS3810 Power HEXFET Mosfet 580W 170A 100 Volt new ; Quantity. 3 sold. More than 10 available ; Item Number. 123295109088 ; Brand. Unbranded ; Accurate ...