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Specifications ; Vds - Drain-Source Breakdown Voltage: 800 V ; Id - Continuous Drain Current: 7.8 A ; Rds On - Drain-Source Resistance: 1.2 Ohms ; Vgs - Gate-Source ...
IRFPE50PbF. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-source voltage. VDS. 800. V. Gate-source ...
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Order today, ships today. IRFPE50PBF – N-Channel 800 V 7.8A (Tc) 190W (Tc) Through Hole TO-247AC from Vishay Siliconix. Pricing and Availability on millions ...
€4.33
IRFPE50PBF Vishay Semiconductors MOSFET 800V N-CH HEXFET datasheet, inventory & pricing.
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IRFPE50PBFVISHAY ; Gate-source voltage. ±20V ; On-state resistance. 1.2Ω ; Mounting. THT ; Gate charge. 200nC ; Kind of package. tube.
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VISHAY / IR IRFPE50PBF spec. device function: mosfet; device package type: -; package: 25 PER TUBE; item per pack: 1; Width: 0.2 IN, Height: 0.78 IN, ...
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4pcs IRFPE50PBF,IRFPE50 Power MOSFET ; Sold by. sairudz ; Returns. Eligible for Return, Refund or Replacement within 30 days of receipt ; Manufacturer, sairu ltd.
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Buy IRFPE50PBF with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other MOSFETs.
$3.15
IRFPE50PBF Infineon Technologies US$3.15 - 800V 7.8A 1.2Ω@10V,4.7A 190W 4V@250uA N Channel TO-247AC-3 MOSFETs ROHS datasheet, price, ...
