IRFP4468PBF ; Input Capacitance (Ciss) (Max) @ Vds. 19860 pF @ 50 V ; FET Feature. - ; Power Dissipation (Max). 520W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
May 21, 2008 · Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25°C. Continuous Drain Current, VGS @ 10V (Silicon Limited). ID @ TC = 100°C.
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IRFP4468PBF Infineon Technologies MOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg datasheet, inventory, & pricing.
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Manufacturer Part #. IRFP4468PBF. Single N-Channel 100 V 2.6 mOhm 540 nC HEXFET® Power Mosfet - TO-247AC. IRFP4468PBF Datasheet. ECAD Model:.
IRFP4468PBF Infineon Technologies | C2919 - LCSC Electronics
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IRFP4468PBF Infineon Technologies $2.7288 - 100V 195A 520W 2.6mΩ@10V,180A 4V@250uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS datasheet, price, ...
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The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using ...
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IRFP4468PBF Infineon Technologies MOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg datasheet, inventory & pricing.
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INFINEON TECHNOLOGIES IRFP4468PBF | Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC - This product is available in Transfer Multisort Elektronik.
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