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IRFP250MPBF ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 200 V ; Current - Continuous Drain (Id) @ 25°C · 30A (Tc) ; Drive Voltage (Max Rds ...
May 28, 2020 · IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
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Specifications ; Vds - Drain-Source Breakdown Voltage: 200 V ; Id - Continuous Drain Current: 30 A ; Rds On - Drain-Source Resistance: 75 mOhms ; Vgs - Gate-Source ...
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Single N-channel HEXFET® power MOSFET; Advanced process technology; Fast switching; Fully avalanche rated; Dynamic dv/dt rating; Ease of paralleling ...
€2.19
Specifications ; Vds - Drain-Source Breakdown Voltage: 200 V ; Id - Continuous Drain Current: 30 A ; Rds On - Drain-Source Resistance: 75 mOhms ; Vgs - Gate-Source ...
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Manufacturer Part #. IRFP250MPBF. Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC. IRFP250MPBF Datasheet. ECAD Model:.
$2.56
IRFP250MPBF ; Description, Value ; Channel Type, N ; Continuous Drain Current Id, 30 ; Drain Source On State Resistance, 75 ; Drain Source Voltage Vds, 200.
IRFP250MPBF Infineon Technologies | C2676 - LCSC Electronics
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$0.84
IRFP250MPBF Infineon Technologies $0.8374 - 200V 30A 75mΩ@10V,18A 214W 4V@250uA 1PCSNChannel TO-247AC-3 MOSFETs ROHS datasheet, price, ...
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2 Pcs MOSFET IRFP250MPBF TO-247 (AC) IRFP250MPBF: Amazon.com: Industrial & Scientific.