Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.
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TrenchFET® Gen V power MOSFET with a very low RDS x Qg figure-of-merit (FOM). Learn More.
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Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance ...
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IRFI620G Datasheet by Vishay Siliconix ; Document Number: 91146 www.vishay.com ; S-81292-Rev. A, 16-Jun-08 1 ; MOSFET ; Isolated Package ; High Voltage Isolation = ...
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High voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz). Sink to lead creepage distance = 4.8 mm. Datasheet button Datasheet · Request Sample button ...
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In stock
Picture of IRFI620G IR MOSFET click picture to enlarge. Part Number: IRFI620G. Manufacturer: IR. Item ID: 2028017631. IR IRFI620G spec. device function: mosfet ...
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$1.68
Order today, ships today. IRFI620 – N-Channel 200 V 4.1A (Tc) 30W (Tc) Through Hole TO-220-3 from Vishay Siliconix. Pricing and Availability on millions of
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In stock
IRFI620G VISHAY / IR MOSFET 2028017632. Thousands of discounted electronic components in stock. No lead time, ship out right away!
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May 22, 2024 · International Rectifier IRFI620G ; Description: Trans MOSFET N-CH 200V 4.1A 3-Pin(3+Tab) TO-220 Full-Pak ; Number of Pins, 3 ; Continuous Drain ...
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Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and ...
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