Apr 25, 2014 · Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25°C. Continuous Drain Current, VGS @ 10V (Silicon Limited). ID @ TC = 100°C.
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Specifications ; Vds - Drain-Source Breakdown Voltage: 100 V ; Id - Continuous Drain Current: 97 A ; Rds On - Drain-Source Resistance: 7.2 mOhms ; Vgs - Gate-Source ...
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IRFB4410ZPBF ; Input Capacitance (Ciss) (Max) @ Vds. 4820 pF @ 50 V ; FET Feature. - ; Power Dissipation (Max). 230W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
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IRFB4410ZPBF Infineon Technologies MOSFET MOSFT 100V 97A 9mOhm 83nC Qg datasheet, inventory & pricing.
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Manufacturer Part #. IRFB4410ZPBF. Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3. IRFB4410ZPBF Datasheet. ECAD Model:.
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IRFB4410ZPBF Infineon Technologies $0.6314 - 100V 97A 9mΩ@10V,58A 230W 4V@150uA 1PCSNChannel TO-220AB MOSFETs ROHS datasheet, price, inventory C2657.
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MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; ...
IRFB4410ZPBF Infineon, Power MOSFET, N Channel, 100 V - Farnell
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The IRFB4410ZPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench ...
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